Short flare definition by additive process for perpendicular head

ABSTRACT

A method for manufacturing a magnetic write head for perpendicular magnetic recording. The method includes forming a write pole, and then depositing a refill layer. A mask structure can be formed over the writ pole and refill layer, the mask structure being configured to define a stitched pole. An ion milling or reactive ion milling can then be performed to remove portions of the refill layer that are not protected by the mask structure. Then a magnetic material can be deposited to form a stitched write pole that defines a secondary flare point. The stitched pole can also be self aligned with an electrical lapping guide in order to accurately locate the front edge of the secondary flare point relative to the air bearing surface of the write head.

FIELD OF THE INVENTION

The present invention relates to perpendicular magnetic recording andmore particularly to a magnetic write head having a stitched write polewith a secondary flare point and a self aligned trailing magneticshield.

BACKGROUND OF THE INVENTION

The heart of a computer's long term memory is an assembly that isreferred to as a magnetic disk drive. The magnetic disk drive includes arotating magnetic disk, write and read heads that are suspended by asuspension arm adjacent to a surface of the rotating magnetic disk andan actuator that swings the suspension arm to place the read and writeheads over selected circular tracks on the rotating disk. The read andwrite heads are directly located on a slider that has an air bearingsurface (ABS). The suspension arm biases the slider toward the surfaceof the disk, and when the disk rotates, air adjacent to the disk movesalong with the surface of the disk. The slider flies over the surface ofthe disk on a cushion of this moving air. When the slider rides on theair bearing, the write and read heads are employed for writing magnetictransitions to and reading magnetic transitions from the rotating disk.The read and write heads are connected to processing circuitry thatoperates according to a computer program to implement the writing andreading functions.

The write head has traditionally included a coil layer embedded infirst, second and third insulation layers (insulation stack), theinsulation stack being sandwiched between first and second pole piecelayers. A gap is formed between the first and second pole piece layersby a gap layer at an air bearing surface (ABS) of the write head and thepole piece layers are connected at a back gap. Current conducted to thecoil layer induces a magnetic flux in the pole pieces which causes amagnetic field to fringe out at a write gap at the ABS for the purposeof writing the aforementioned magnetic transitions in tracks on themoving media, such as in circular tracks on the aforementioned rotatingdisk.

In recent read head designs a spin valve sensor, also referred to as agiant magnetoresistive (GMR) sensor, has been employed for sensingmagnetic fields from tie rotating magnetic disk. The sensor includes anonmagnetic conductive layer, referred to as a spacer layer, sandwichedbetween first and second ferromagnetic layers, referred to as a pinnedlayer and a free layer. First and second leads are connected to the spinvalve sensor for conducting a sense current therethrough. Themagnetization of the pinned layer is pinned perpendicular to the airbearing surface (ABS) and the magnetic moment of the free layer islocated parallel to the ABS, but free to rotate in response to externalmagnetic fields. The magnetization of the pinned layer is typicallypinned by exchange coupling with an antiferromagnetic layer.

The thickness of the spacer layer is chosen to be less than the meanfree path of conduction electrons through the sensor. With thisarrangement, a portion of the conduction electrons is scattered by theinterfaces of the spacer layer with each of the pinned and free layers.When the magnetizations of the pinned and free layers are parallel withrespect to one another, scattering is minimal and when themagnetizations of the pinned and free layer are antiparallel, scatteringis maximized. Changes in scattering alter the resistance of the spinvalve sensor in proportion to cos θ, where θ is the angle between themagnetizations of the pinned and free layers. In a read mode theresistance of the spin valve sensor changes proportionally to themagnitudes of the magnetic fields from the rotating disk. When a sensecurrent is conducted through the spin valve sensor, resistance changescause potential changes that are detected and processed as playbacksignals.

In order to meet the ever increasing demand for improved data rate anddata capacity, researchers have recently been focusing their efforts onthe development of perpendicular recording systems. A traditionallongitudinal recording system, such as one that incorporates the writehead described above, stores data as magnetic bits orientedlongitudinally along a track in the plane of the surface of the magneticdisk. This longitudinal data bit is recorded by a fringing field thatforms between the pair of magnetic poles separated by a write gap.

A perpendicular recording system, by contrast, records data asmagnetizations oriented perpendicular to the plane of the magnetic disk.The magnetic disk has a magnetically soft underlayer covered by a thinmagnetically hard top layer. The perpendicular write head has a writepole with a very small cross section and a return pole having a muchlarger cross section. A strong, highly concentrated magnetic field emitsfrom the write pole in a direction perpendicular to the magnetic disksurface, magnetizing the magnetically hard top layer. The resultingmagnetic flux then travels through the soft underlayer, returning to thereturn pole where it is sufficiently spread out and weak that it willnot erase the signal recorded by the write pole when it passes backthrough the magnetically hard top layer on its way back to the returnpole.

Certain design parameters are important to efficient write headperformance, such as, for example, the flare point of the write head.However, as the write heads become ever smaller, it becomes ever moredifficult to control these desired parameters to the accuracy needed.Therefore, there is a need for a structure and/or method of manufacturethat can allow these write head parameters to be accurately controlledeven in very small write heads.

SUMMARY OF THE INVENTION

The present invention provides a method for manufacturing a magneticwrite head for perpendicular magnetic recording. The method provides forthe formation of a secondary flare point having a front edge that can bevery accurately located relative to an air bearing surface. The methodincludes forming a write pole and then depositing a refill layer. A maskstructure is formed having an opening that is configured to define asecondary flare point. A material removal process such as ion milling orreactive ion milling can then be performed to remove material from thearea that is not covered by the mask. A magnetic material can then bedeposited to form a stitched pole that is magnetically connected withthe write pole.

The method can also advantageously be used to construct a self alignedelectrical lapping guide. The lapping guide can be defined by the samemasking step used to define the stitched pole. In this way, the frontedge of the stitched pole (i.e. the secondary flare point) can be veryaccurately spaced from the air bearing surface, by using the selfaligned lapping guide to indicate when lapping should be terminatedduring a lapping operation used to define the air bearing surface.

These and other features and advantages of the invention will beapparent upon reading of the following detailed description of preferredembodiments taken in conjunction with the Figures in which likereference numerals indicate like elements throughout.

BRIEF DESCRIPTION OF THE DRAWINGS

For a fuller understanding of the nature and advantages of thisinvention, as well as the preferred mode of use, reference should bemade to the following detailed description read in conjunction with theaccompanying drawings which are not to scale.

FIG. 1 is a schematic illustration of a disk drive system in which theinvention might be embodied;

FIG. 2 is an ABS view of a slider, taken from line 2-2 of FIG. 1,illustrating the location of a magnetic head thereon;

FIG. 3 is a cross sectional view of a magnetic head, taken from line 3-3of FIG. 2 and rotated 90 degrees counterclockwise, of a magnetic writehead according to an embodiment of the present invention;

FIGS. 4-20 are illustrations of a write head in various intermediatestages of manufacture illustrating a method of manufacturing a magneticwrite head according to an embodiment of the invention;

FIGS. 21-23 are illustrations of a write head in various intermediatestages of manufacture illustrating a method of manufacturing a magneticwrite head according to an alternate embodiment of the invention;

FIGS. 24-36 are illustrations of a write head in various intermediatestages of manufacture illustrating a method of manufacturing a magneticwrite head according to yet another embodiment of the invention; and

FIGS. 37-50 are illustrations of a write head in various intermediatestages of manufacture according to still another embodiment of theinvention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

The following description is of the best embodiments presentlycontemplated for carrying out this invention. This description is madefor the purpose of illustrating the general principles of this inventionand is not meant to limit the inventive concepts claimed herein.

Referring now to FIG. 1, there is shown a disk drive 100 embodying thisinvention. As shown in FIG. 1, at least one rotatable magnetic disk 112is supported on a spindle 114 and rotated by a disk drive motor 118. Themagnetic recording on each disk is in the form of annular patterns ofconcentric data tracks (not shown) on the magnetic disk 112.

At least one slider 113 is positioned near the magnetic disk 112, eachslider 113 supporting one or more magnetic head assemblies 121. As themagnetic disk rotates, slider 113 moves radially in and out over thedisk surface 122 so that the magnetic head assembly 121 may accessdifferent tracks of the magnetic disk where desired data are written.Each slider 113 is attached to an actuator arm 119 by way of asuspension 115. The suspension 115 provides a slight spring force whichbiases slider 113 against the disk surface 122. Each actuator arm 119 isattached to an actuator means 127. The actuator means 127 as shown inFIG. 1 may be a voice coil motor (VCM). The VCM comprises a coil movablewithin a fixed magnetic field, the direction and speed of the coilmovements being controlled by the motor current signals supplied bycontroller 129.

During operation of the disk storage system, the rotation of themagnetic disk 112 generates an air bearing between the slider 113 andthe disk surface 122 which exerts an upward force or lift on the slider.The air bearing thus counter-balances the slight spring force ofsuspension 115 and supports slider 113 off and slightly above the disksurface by a small, substantially constant spacing during normaloperation.

The various components of the disk storage system are controlled inoperation by control signals generated by control unit 129, such asaccess control signals and internal clock signals. Typically, thecontrol unit 129 comprises logic control circuits, storage means and amicroprocessor. The control unit 129 generates control signals tocontrol various system operations such as drive motor control signals online 123 and head position and seek control signals on line 128. Thecontrol signals on line 128 provide the desired current profiles tooptimally move and position slider 113 to the desired data track on disk112. Write and read signals are communicated to and from write and readheads 121 by way of recording channel 125.

With reference to FIG. 2, the orientation of the magnetic head 121 in aslider 113 can be seen in more detail. FIG. 2 is an ABS view of theslider 113, and as can be seen the magnetic head including an inductivewrite head and a read sensor, is located at a trailing edge of theslider. The above description of a typical magnetic disk storage system,and the accompanying illustration of FIG. 1 are for representationpurposes only. It should be apparent that disk storage systems maycontain a large number of disks and actuators, and each actuator maysupport a number of sliders.

With reference now to FIG. 3, the invention can be embodied in amagnetic write head 302. The write head includes a write pole 304 and afirst, or leading, return pole 306. The return pole has a cross sectionat the air bearing surface (ABS) that is much larger than that of thewrite pole. The write pole 304 and return pole 306 can be magneticallyconnected at a back gap 308 located away from the ABS. An electricallyconductive, non-magnetic write coil 310, shown in cross section in FIG.3 passes through the write head 302, and can be embedded in anon-magnetic, electrically insulating coil insulation layer 311. Whencurrent flows through the write coil 310, a magnetic field is produced,which induces a magnetic flux through the write pole 304. This magneticflux causes a highly concentrated write field 312 to be emitted from thewrite pole 312, which locally magnetizes a magnetically hard top layer314 of a magnetic medium 316. A resulting magnetic flux 318 flowsthrough a magnetically softer under-layer of the magnetic medium 316 toreturn to the return pole 306 where it is sufficiently spread out thatit does not magnetize the top layer 314.

A magnetic trailing shield 322 can be provided at the ABS and isseparated from the trailing edge of the write pole 304 by a non-magnetictrailing gap layer 324. The trailing shield 322 can be magneticallyconnected with the back gap layer 308 by a second, or trailing, magneticpole 323.

A magnetic stitched pole 324 is formed over the write pole 304 and aswill be discussed below, provides a secondary flare point that is selfaligned and easily, accurately and reliably located relative to the ABS.A non-magnetic spacer 326 is formed over the stitched pole 324, and eachof the stitched pole and non-magnetic spacer 326 can be formed as amagnetic shell that wraps around the trailing edge and sides of thewrite pole 304 (although this is not shown in FIG. 3).

The presence of the trailing magnetic shield 322 adjacent to thetrailing edge of the write pole 304 increases write speed by increasingthe field gradient of the write field 312. The smaller the gap betweenthe trailing shield 322 and the write pole 304 the more the fieldgradient will be increased. However, if the trailing shield is too closeto the write pole 304, the strength of the write field will suffer,because too much flux will be leak from the write pole 304 to thetrailing shield 322. The non-magnetic spacer 326 ensures that thetrailing shield 322 will be not be too close to the write pole 304 inregions removed from the ABS, thereby maximizing the field gradientincrease provided by the trailing shield 322, while minimizing the lossof flux to the trailing shield 322.

Self Aligned Shield and Flare With Stitched Short Flare Defined ByDeposition:

The advantage of the structure described above will be better understoodwith reference to FIGS. 4-20 which illustrate a method of manufacturinga write head according to an embodiment of the invention. Withparticular reference to FIG. 4 a magnetic write pole material 404(preferably a laminate of magnetic and non-magnetic layers) is depositedover the substrate. A series of mask layers 406, 408, 410 and 411 arethen deposited over the write pole material 404. The layer 406 can be ahard mask material such as Ta—O and can have a thickness of, forexample, 30 nm. A second hard mask layer 408, constructed of a materialthat is resistant to chemical mechanical polishing such as diamond likecarbon (DLC), is deposited over the first hard mask layer 406. An imagetransfer layer 410 can be deposited over the second hard mask layer 408,and can be constructed of a non-photosensitive polyimide material suchas DURIMIDE®. Finally, a mask material 411, such as photoresist, can beformed over the image transfer layer 410 and can bephotolithographically patterned to define a desired write pole shape.

With reference now to FIG. 5, a reactive ion etch (RIE) is performed totransfer the image of the photoresist layer 411 onto the underlyinglayers 410 and 408. Then, with reference to FIG. 6, an ion millingprocess can be performed to remove portions of the layer 406 and thewrite pole material 404 that are not covered by the above mask layers406, 408, 410, 411. The first hard mask 406 is beneficial in maintaininga straight, well defined trailing edge 602 on the write pole 404. Also,the ion milling is preferably performed at an angle, so as to form thewrite pole 404 with a tapered, trapezoidal shape.

With reference now to FIG. 7, a layer of Fluorine RIE resistant material702 such as 10 nm of diamond like carbon (DLC) or 5 nm of alumina (ALD)is deposited. A refill layer 704 such as 0.5-1 um of Si—N or SiO₂ isthen deposited over the layer 702. Then, with reference to FIG. 8 achemical mechanical polishing process (CMP) is performed to planarizethe structure, stopping at the DLC layer 408.

FIG. 9 shows a top down view of the structure described above. Withreference now to FIGS. 9 and 10, a layer of electrically conducivelapping guide material (ELG material) 902 is deposited in a region wherean electrical lapping guide (ELG) will be formed adjacent to the writepole. The ELG material can be deposited by a process such as a lift offprocess.

With reference now to FIGS. 11 and 12 a mask structure 1202 is formed,such as from photolithographically patterned photoresist. The mask 1202includes a first portion 1204 that covers a portion of the hard mask 406and write pole 404 hidden thereunder. As can be seen, this first portion1204 is formed over a portion of the throat 1206 of the write pole andhard mask 406. The mask 1202 also includes a second portion 1208 formedover the ELG material 902. This second mask portion 1208 is configuredto define an electrical lapping guide (ELG). A reactive ion etch (RIE)is then performed to remove portions of the fill layer 704 and ELGmaterial 902 that are not protected by the mask layer 1202. A sweepingreactive ion milling can then be performed to remove residual fillmaterial 704 from the sides of the write pole 404. A sweeping ionmilling in an oxygen (O₂) atmosphere can also be performed to removeremaining DLC material 702 from the sides of the write pole 404 inregions not protected by the mask layer 1202. This completely exposesthe write pole 404 (top and two sides) that are not covered by masklayer 1202 in preparation for depositing a magnetic material, which willbe described below.

FIG. 13, shows a region outside of the mask layer 1202 where the filllayer 704, and layer 702 have been removed. Another mask structure 1302is formed. The mask 1302 can be formed with the previously constructedmask 1202 (FIG. 12) still in place. The mask 1302 can be formed over alift off material layer 1304 such as PMGI to facilitate lifting off themask 1302 at a later point as will be seen.

With reference now to FIG. 14, a layer of magnetic material such as CoFe1402 is deposited followed by a non-magnetic spacer layer 1404. Themagnetic layer 1402 provides a secondary flare point that is selfaligned with an electrical lapping guide as will become clearer below.The non-magnetic spacer layer can be constructed of, for example Ta,Ta—O, Ni—Cr, Ru, Ir, Rh, etc. During deposition of the layers 1402,1404, shadowing from the mask layer 1302 causes the layers 1402, 1404 tobe deposited thicker at the top (i.e. leading edge) of the write pole404 than at the sides. Also, the layers 1402, 1404 can extend across thesubstrate 402 a distance (D) of less than 0.4 um.

Then, the mask 1302 is lifted off. The previously formed mask 1202 (FIG.12) can also be lifted off. A non-magnetic RIEable fill material 1502such as SiO₂ is then deposited, and a chemical mechanical polishingprocess is performed to planarize the SiO_(2.) resulting in a structureas shown in FIG. 15. Then, a reactive ion etch is performed to removethe SiO₂ fill layer 1502, and also to remove the remaining DLC masklayer (second mask layer 408 in FIG. 7) from the pole tip area that waspreviously protected by the mask 1202 (FIG. 12). This results in a writepole 404 in the pole tip region as shown in FIG. 16, with only the firstmask layer 406 remaining over the pole 404. It should be understood thatFIG. 16, shows the pole tip region that was previously covered by mask1202 (FIG. 12), whereas FIG. 15 shows the region that was not covered bythe mask 1202, where the magnetic layer 1402 and non-magnetic shell 1404have been deposited.

FIG. 17 shows a side view, as taken from 17-17 of FIG. 16. Withreference then to FIG. 17, a first layer of non-magnetic material 1702is deposited. The layer 1702 can be deposited by atomic layer deposition(ALD) and will be referred to herein as a first ALD layer 1702. Thefirst ALD layer 1702 can be deposited to a thickness of, for example,about 5 nm. An end point detection layer 1704 is then deposited. The endpoint detection layer 1704 is preferably constructed of a material thatcan be readily detected by a process such as Secondary Ion MassSpectroscopy (SIMS), and can be about 5 nm thick. Thereafter, a secondALD layer 1706 is deposited, which can be, for example, about 70 nmthick. The placement of the end point detection layer allows thethickness of the trailing shield gap to be controlled independently ofthe spacing between the trailing shield gap and the secondary flarepoint, as will become clearer below.

With reference now to FIG. 18, an ion milling is performed to remove ALDmaterial 1706, and is terminated when the end point detection layer 1704has been reached. The ion milling removes horizontally disposed materialfaster than vertically disposed material and, therefore, leaves verticalside walls such as the wall of ALD material 1706 shown in FIG. 18. ALDmaterial will also be left on the sides of the write pole 404, althoughthis can not be seen in FIG. 18, as the sides are into and out of theplane of the page in FIG. 18. Therefore, in this manner, the ionmilling, with end point detection, allows a relatively thin trailingshield gap, and relatively thicker side shield gaps to be formed. Forexample, the trailing shield gap could be 35 nm (including the thicknessof the mask layer 406 and first ALD layer 1702) and the side gap couldbe about 90 nm (including the thickness of the first and second ALDlayers 1702, 1706). Again, the side gap can not be seen in FIG. 18.

With reference now to FIG. 19, a trailing shield mask structure 1902 isformed, and a magnetic material such as Co—Fe or Ni—Fe can beelectrically plated into the opening in the mask 1902 to form a trailingmagnetic shield. Then, the mask 1902 is lifted off, leaving a structureas shown in FIG. 20. As can be seen in FIG. 19, the ALD layers 1702,1706 provide a desired spacing between the shield 1904 and the magneticsecondary flare structure 1402. This prevents magnetic flux from leakingfrom the magnetic secondary flare structure 1402 to the magnetic shield1904. The magnetic layers 1702, 1706 could provide a spacing (S) ofabout 30 nm between the magnetic spacer layer 1402 and the trailingshield 1904, and could define a shield throat height (STH) of about 55nm, as measured from the air bearing surface ABS to the back edge 2002of the trailing shield 1904.

The above described method provides a self aligned wrap around magneticpole 1402 that is stitched to the main pole 404, and provides asecondary flare point (at the front edge 2004 of the stitched pole 1402)that can is self aligned and can be easily controlled. The abovedescribed process also provides a trailing wrap around shield 1904 thathas an easily defined, self aligned throat height STH.

Short Flare Definition By Additive Process:

With reference now to FIGS. 21-23, a method for constructing aperpendicular magnetic write head according to another embodiment of theinvention is described. With particular reference to FIG. 21, apreviously constructed write pole 2102 formed on a substrate 2104 isshown in a top down view. A bi-layer mask structure 2106 is formed overthe write pole 2102 and substrate 2104. The mask 2106 has an opening2108 with a front edge 2110 located at a desired secondary flare pointlocation. In FIG. 21, portions of the write pole 2102 that are hiddenbeneath the mask 2106 are shown in dotted line, whereas portions of thewrite pole 2102 that are exposed through the opening 2108 are shown assolid lines.

With reference to FIG. 22, a layer of magnetic material 2202 such asNi—Fe or Co—Fe is deposited into the opening 2108 in the mask 2106. Thismagnetic material 2202 forms a stitched magnetic pole that has a frontedge located at and defined by the front edge 2110 (FIG. 21) of the maskopening 2108. This front edge of the stitched pole 2202 forms asecondary flare point that can be easily controlled relative to ayet-to-be-defined air bearing surface (ABS). After depositing themagnetic stitched pole layer 2202, a layer of non-magnetic material isdeposited into the trench to form a non-magnetic spacer 2204. Afterdeposition of the layers 2202, 2204, the mask structure 2106 can belifted off.

FIG. 23 shows a side view of the write head structure. In FIG. 23 it canbe seen that the stitched pole 2202 has a front edge 2302 that isdefines a secondary flare point located a desired distance (FV) from theintended air bearing surface location (ABS).

Magnetic Deposition Defined Draping Stitched Flare for Self AlignedPerpendicular Writer:

FIGS. 24-36 illustrate a method of manufacturing a perpendicularmagnetic write head according to yet another embodiment of theinvention. With particular reference to FIG. 24, a substrate 2402 isprovided. A magnetic main write pole material 2404 is deposited over thesubstrate 2402. A series of mask layers 2406 is deposited over the writepole material 2404. The mask layers 2406 include a first hard mask layer2408 preferably constructed of alumina (Al₂O₃) and having a thickness ofabout 20 nm formed over the write pole layer 2404. A second hard masklayer 2410, preferably constructed of Si—N and having a thickness ofabout 30 nm is deposited over the first hard mask layer 3408. A thirdhard mask layer 2412, preferably constructed of Al—Ti—O and having athickness of about 20 nm is deposited over the second hard mask layer2410.

An image transfer layer 2414 is deposited over the first second andthird hard mask layers. The image transfer layer can be constructed of apolyimide material such as DURIMIDE®, and can have a thickness of about1300 nm. The mask structure 2406 can also include a layer of SiO₂ 2416formed over the image transfer layer 2414 and a second layer of amaterial such as DURIMIDE 2418 formed over the layer 2416. A layer ofphotoresist material 2420 is formed at the top of the mask structure andis photolithographically patterned to define a desired main pole shape.

A three part reactive ion etching process (RIE) is performed to transferthe image of the photoresist layer 2420 onto the underlying layers 2418,2414, 2416. Some or all of the layers 2418, 2420 can be removed by thisthree part RIE process, resulting in a structure as shown in FIG. 25.

A multi-angle ion milling is then performed, resulting in the structureas shown in FIG. 26 with a trapezoidal, tapered write pole 2404. A TMAHetch and NMP strip can then be performed to remove any remaining imagetransfer layer 2414. With reference to FIG. 27, a layer of alumina isdeposited by a conformal deposition process such as atomic layerdeposition (ALD) and will be referred to herein as ALD layer 2702. TheALD layer 2702 can be deposited to a thickness of about 40 nm.

With reference now to FIG. 28, an ion milling is performed sufficientlyto remove a top portion of the ALD layer 2702 and to remove the thirdhard mask 2412 (FIG. 27). The third hard mask layer 2412 can be used asan end point detection layer, by detecting the presence of Ti, such asby Secondary Ion Mass Spectroscopy (SIMS). In this way, a non-magneticside gap 2802 having a thickness (SG) can be formed. The side gap SG canbe, for example about 40 nm.

Then, a reactive ion etch (RIE) can be performed to remove the secondhard mask layer 2410, resulting in a structure as shown in FIG. 29. Theremaining first mask layer 2408 will be available to define a trailingshield gap as described further below.

FIG. 30 is a top down view showing the capping layer 2408 overlying thewrite pole 2404 and showing an adjacent writer lapping guide area. Alayer of electrically conductive electrical lapping guide material (ELGmaterial) 3002 is formed in an area adjacent to the write pole 2404 andcapping layer 2408. The ELG material 3002 can, for example Au, Ru, Ir,Rh, etc. and can be deposited by a liftoff process that leaves thematerial 3002 only in the desired ELG area.

With reference now to FIG. 31, a mask 3102 is formed. The mask has afirst portion 3104 that covers a throat portion of the write pole 2404and hard mask 2408 as shown, leaving a back portion of the write pole2404, 2408 uncovered. This first portion 3104 has an edge 3106 that willdefine the location of a secondary flare point, provided by a stitchedpole, as will become clearer below. The portions of the mask 2404, andcapping layer 2408 that are hidden beneath the mask 3102 are shown indotted line.

The mask 3102 also includes a second portion 3108 that covers a portionof the ELG material 3002 and that is configured to define an ELG. Withreference to FIG. 32, the mask 3102 can be formed by first depositing alayer of Si—N, SiO₂ or PMGI as a mask liftoff material 3202, anddepositing a layer of polyimide material 3204 such as DURIMIDE®thereover. A layer of photoresist 3206 can then be deposited andphotolithographically patterned. A reactive ion etch (RIE) process canthen be performed to transfer the image of the photoresist onto theunderlying polyimide and liftoff layers.

With the mask 3102 in place, a reactive ion milling (RIM) or reactiveion etching (RIE) can be performed to remove the hard mask 2408 and aportion of the ALD sidewalls 2702. Then, a layer of magnetic material3208 can be deposited, followed by a layer of non-magnetic spacermaterial 3210. The remaining polyimide material 3204 can then be liftedoff, and the remaining liftoff material 3202 (e.g. Si—N, SiO₂ or PMGI)can be removed by a RIE or a wet etch, depending on the liftoff materialused, resulting in a structure as shown in FIG. 33.

Then, with reference to FIG. 34, a non-magnetic spacer material 2402such as Rh is deposited. Then, with reference to FIG. 35 a maskstructure 3402 is formed having an opening 3404 to define a trailingmagnetic shield. A magnetic material such as NiFe or CoFe is thenelectrically plated into the opening 3404 and the mask 3402 is liftedoff, resulting in the structure as shown in side view in FIG. 36, with atrailing shield 3602 formed over the non-magnetic spacer material 3402and having a magnetic stitched pole 3208 that defines a secondary flarepoint at a location 3604. The non-magnetic spacer 3210 helps to maintaina desired spacing between the stitched pole 3208 and the magnetictrailing shield, in order to avoid losing too much magnetic flux betweenthe stitched pole 3208 and the trailing shield 3602. In FIG. 36 it canbe seen that the remaining hard mask layer 2408 and non-magnetic spacerlayer 3402 together define the trailing gap thickness.

With reference again to FIG. 31, it can be seen that, because bothportions 3104, 3108 of the mask 3102 are formed in the samephotolithographic process so that the resulting lapping guide is selfaligned with the secondary flare point provided by the stitched pole3208. As those skilled in the art will recognize, an air bearing surfacewill be formed when a row of sliders (not shown) is cut from a wafer,and a lapping process is performed to remove wafer material until anintended ABS plane has been reached. The electrical lapping guidegreatly facilitates this process by giving an accurate indication ofwhen lapping should be terminated. The electrical resistance of thelapping guide can be measured during lapping. As material is removedfrom the lapping guide, the resistance will increase, and reaching adesired lapping guide resistance indicates that the ABS location hasbeen reached and lapping should be terminated.

Leading Edge Tapered and Self Aligned Perpendicular Writer Process:

With reference now to FIGS. 37-50 a method for manufacturing aperpendicular write head according to yet another embodiment of theinvention is described. With particular reference to FIG. 37, asubstrate 3702 is provided, and a write pole 3704 is formed over thesubstrate. The write pole 3704 can have a hard mask layer 3706 such asAl—Ti—O formed thereover. Then, with reference to FIG. 38 a layer ofnon-magnetic RIEble material 3802 such as Si—N or S—C is deposited fullfilm. The term “RIEable” is used herein to describe a material that canbe readily removed by Reactive Ion Etching (RIE).

With reference to FIG. 39, which shows a top down view, a mask structure3902 is formed over the write head 3404 and non-magnetic layer 3802. Themask has an opening 3904 configured over a portion of the write pole3704 where a stitched pole will be formed. A reactive ion etching isthen performed to remove portions of the non-magnetic layer 3802 thatare not protected by the mask 3902 (i.e. portions exposed through theopening 3904) and forms an undercut, resulting in a structure as shownin FIG. 40. The portion of the write pole that is protected by thephotoresist mask is shown in FIG. 41 with the non-magnetic layer 3802still intact. Then, with reference to FIG. 42. an ion milling isperformed to remove the hard mask layer 3706 (FIG. 40). The ion millingalso removes a portion of the write pole 3704 in the region exposedthrough the opening in the mask 3902, forming a rounded write pole asshown in FIG. 42. The ion milling also removes a portion of thesubstrate, resulting in a notched substrate 3702 as shown. Then, withreference to FIG. 43, a magnetic material 4302 is deposited to form astitched magnetic pole 4302. The stitched pole 4302 can be formed by asweeping ion beam deposition which is preferably performed using astationary chuck (i.e. the ion beam deposition is in a fixed directionand not rotating or sweeping). Shadowing from the mask layer 3902prevent much of the magnetic stitched pole material 4302 from beingdeposited onto the substrate, and deposits the material 4302 primarilyon the write pole 3704 as shown. Also, as seen in FIG. 44, which shows aside view, the sweeping ion beam deposition and shadowing from the masklayer 3902 causes the stitched pole 4302 to have a tapered front edge.Then, the mask 3902 can be lifted off, resulting in the structure asshown in FIG. 45, A reactive ion etch can be performed to remove thenon-magnetic layer 3802 from the field.

With reference now to FIG. 46, a layer of non-magnetic spacer material4602 is deposited. This non-magnetic layer 4602 can be alumina, whichcan be deposited by a conformal deposition process such as atomic layerdeposition (ALD) to a thickness of about 60 nm. Then, an ion mill can beperformed using the layer 3706 as an end point detection layer. This ionmill removes a portion of the non-magnetic spacer layer 4602 to formdesired trailing shield side gaps. The layer 3706 forms the trailinggap.

Then, with reference to FIG. 48 a non-magnetic seed layer 4802 isdeposited. Then, a trailing shield mask 4804 is formed with an openingconfigured to define a trailing magnetic shield. A magnetic 4902 canthen be plated in to the opening in the mask 4804. The mask 4802 canthen be lifted off, leaving the structure as shown in FIG. 49

While various embodiments have been described, it should be understoodthat they have been presented by way of example only, and notlimitation. Other embodiments falling within the scope of the inventionmay also become apparent to those skilled in the art. Thus, the breadthand scope of the invention should not be limited by any of theabove-described exemplary embodiments, but should be defined only inaccordance with the following claims and their equivalents.

1. A method for manufacturing a perpendicular magnetic write head,comprising: providing a substrate; forming a magnetic write pole on asubstrate; forming a mask structure over the substrate and magneticwrite pole, the mask structure having an opening over a portion of thewrite pole; and depositing a magnetic material into the opening to froma stitched magnetic pole that is connected with the magnetic write pole.2. A method as in claim 1 wherein the opening has a front edge locatedat a desired secondary flare point location.
 3. A method formanufacturing a perpendicular magnetic write head, comprising: providinga substrate; forming a magnetic write pole on the substrate, the writepole having a top and first and second sides; depositing an electricallyconductive material in an electrical lapping guide area adjacent to thewrite pole; forming a first mask structure, the first mask structurehaving a first portion that covers a portion of the write pole andhaving an edge that defines a secondary flare point, the first maskstructure also having a second portion that defines an electricallapping guide over the electrically conductive material; forming asecond mask structure having an opening configured to define a astitched magnetic pole; and depositing a magnetic material into theopening formed in the second mask structure, the magnetic material beingdeposited by ion beam deposition at an angle relative to normal so thatshadowing from the second mask structure results in a greater amount ofmagnetic material being deposited on the top surface of the write polethan on the sides of the write pole.
 4. A method as in claim 3 furthercomprising, after depositing the magnetic material into the opening inthe second mask structure; depositing a non-magnetic material into theopening in the second mask structure; lifting off the first and secondmask layers; depositing a second layer of non-magnetic material; andforming a trailing shield over the second layer of non-magneticmaterial.
 6. A method as in claim 3 further comprising, after depositingthe magnetic material into the opening in the second mask structure;depositing a non-magnetic material into the opening in the second maskstructure; lifting off the first and second mask layers; depositing asecond layer of non-magnetic material; depositing an end point detectionlayer; depositing a third layer of non-magnetic material; performing anion milling until the end point detection layer has been reached; andforming a trailing shield.
 7. A method as in claim 3 wherein the ionbeam deposition is performed in a fixed direction without rotation orsweeping.
 8. A method for manufacturing a magnetic write head,comprising: providing a substrate; forming a magnetic write pole overthe substrate; depositing an electrically conductive material in alapping guide region adjacent to the write pole; depositingnon-magnetic, RIEable material; forming a mask structure, the maskstructure having a first portion formed over a portion of the write poleand having an edge that defines a secondary flare point and having asecond portion formed over the electrically conductive material thatdefines an electrical lapping guide; performing a reactive ion etch toremove portions of the RIEable material that are not protected by themask structure and to remove portions of the electrically conductivematerial that are not protected by the mask structure; and depositing amagnetic material over the write pole to form a stitched magnetic polehaving a front edge that is aligned with the edge of the first portionof the mask structure.
 9. A method as in claim 8 wherein the RIEablematerial comprises SiO₂.
 10. A magnetic write head for perpendicularmagnetic data recording, the write head comprising: a substrate; amagnetic write pole formed on the substrate, the write pole having atrailing edge and first and second sides; and a magnetic stitched poleformed over a portion of the magnetic write pole, the stitched polehaving a front edge that defines a secondary flare point; first andsecond non-magnetic side walls formed at the first and second sides ofthe write pole; wherein the non-magnetic side walls extend from thesubstrate at least to the trailing edge of the write pole in a firstregion near an air bearing surface and wherein the first and secondnon-magnetic side walls extend from the substrate to a point between thesubstrate and the trailing edge, allowing the stitched magnetic pole toextend partially over the sides of the write pole.
 11. A write pole asin claim 10 further comprising: a first layer of non-magnetic spacermaterial formed over the magnetic stitched pole, the first layer ofnon-magnetic spacer material having a front edge that is aligned withthe secondary flare point; a second layer of non-magnetic spacermaterial formed over the write pole and over the first layer ofnon-magnetic spacer material; and a trailing magnetic shield, formedover the second layer of non-magnetic, spacer material.
 12. A magneticwrite head for perpendicular magnetic data recording, the write headcomprising: a substrate; a magnetic write head formed over the substratethe write head extending to an air bearing surface; a stitched magneticpole formed over the write pole and recessed from the air bearingsurface, the stitched pole having an edge disposed toward the airbearing surface that defines a secondary flare point and that is slopedat an angle relative to the air bearing surface.
 13. A write head as inclaim 12 further comprising: a non-magnetic layer formed over the writepole and stitched magnetic pole; and a magnetic trailing shield formedover the non-magnetic layer.
 14. A write head as in claim 13 furthercomprising alumina side walls formed at first and second sides of thewrite pole and wherein the non-magnetic layer formed over the write poleand stitched magnetic pole comprises Rh.
 15. A magnetic write head as inclaim 12 wherein the write pole has a trailing edge that is flat in aregion between the secondary flare point and the air bearing surface andhas a trailing edge that is rounded in a region beyond the secondaryflare point.
 16. A method for manufacturing a magnetic write head forperpendicular magnetic data recording, comprising: providing asubstrate; forming a write pole over the substrate with a thin aluminahard mask over a trailing edge of the write pole; depositing a RIEablematerial; forming a mask over the write pole, thin alumina hard mask andRIEable material, the mask having a back edge that defines a secondaryflare point location; performing a reactive ion etch (RIE) to remove theRIEable material in an area not protected by the mask; performing an ionmilling to remove the thin alumina hard mask in an area not protected bythe mask; and performing a sweeping ion beam deposition to deposit amagnetic material onto portions of the write pole that are not protectedby the mask, the sweeping ion beam deposition being performed at anangle relative to normal so that shadowing from the mask forms astitched magnetic pole with a tapered front edge.
 17. A method as inclaim 16 further comprising, performing a lapping operation to form anair bearing surface, and wherein the tapered surface of the stitchedmagnetic pole is formed at an angle relative to the air bearing surface.18. A method as in claim 16 further comprising: removing the mask;depositing a non-magnetic material; and forming a magnetic trailingshield over the non-magnetic material.
 19. A method as in claim 16further comprising: removing the mask; depositing alumina; performing anion milling to remove horizontally disposed portions of the alumina;depositing Rh; and depositing a magnetic trailing shield.
 20. A methodas in claim 16 wherein the RIEable material comprises a materialselected from the group consisting of Si—C and Si—N.
 21. A method as inclaim 16 wherein the reactive ion etching produces an undercut in thenon-magnetic RIEable material.
 22. A method as in claim 8 wherein theRIEable material comprises SiN or SiO2 and the reactive ion etch isperformed isotropically.
 23. A method as in claim 8 wherein the reactiveion etch is performed in an atmosphere that comprises Chlorine.
 24. Amethod for manufacturing a magnetic write head for perpendicularmagnetic recording, comprising: forming a magnetic write pole;depositing a refill layer; forming a mask structure over the write poleand refill layer, the mask structure having an opening with a front edgelocated so as to define a front edge of a stitched pole; and performinga sweeping ion milling to remove portions of the refill layer that arenot protected by the mask.
 25. A method as in claim 24 wherein thesweeping ion milling is a reactive ion milling.
 26. A method as in claim24 wherein the refill layer comprises SiO₂ or SiN.